Compact low-power asynchronous resistor-based memory read operation and circuit

ABSTRACT

A compact, low-power, asynchronous, resistor-based memory read circuit includes a memory cell having a plurality of consecutive memory states, each of said states corresponding to a respective output voltage. A sense amplifier reads the state of the memory cell. The sense amplifier includes a voltage divider configured to receive the output voltage of the memory cell and to output a settled voltage an amplifier having a voltage threshold between the settled voltages associated with two of said consecutive memory states, configured to discriminate between said two consecutive memory states.

DECLARATION OF GOVERNMENT RIGHTS

This invention was made with Government support under Contract No.HR0011-09-C-0002 awarded by Defense Advanced Research Projects Agency(DARPA). The Government has certain rights in this invention.

BACKGROUND

1. Technical Field

The present invention relates to read circuits for resistor-based memoryand, more particularly, to compact, low-power, asynchronous, readcircuits for resistor-based memory.

2. Description of the Related Art

There has been increasing interest in resistor-based memory, such asmagnetic RAM, phase-change memory, and memristor-based memory. In somesystems requiring ultra-low power dissipation, such as neural networkcomputing systems and wireless sensor networks, compact low-power memoryread circuits are useful. In such systems, high computing speeds are notrequired, but the power to read memories should be very low to reduceenergy dissipation and to extend battery life. In addition, many suchsystems operate asynchronously to save power.

Conventional resistor-based memory read circuits, called sense amplifier(S/A) circuits, are not energy efficient. Furthermore, many conventionalS/A circuits require a clock signal, which prevents fully asynchronousoperation. For example, such S/A circuits include voltage dividers orresistor dividers. However, all of these memory read operation schemesessentially use two clock phases: a precharge phase and a read phase.During the precharge phase, the bitlines are precharged to a certainvoltage. During the read phase, the memory cell is connected to thebitlines and the bitline voltage difference caused by the memory cell issensed and amplified by the memory read circuit. This type of operationis synchronous and needs a clock to function properly, which isunavailable in fully asynchronous systems.

Most existing S/A circuits are based on analog comparators or othertypes of amplifiers, which are neither compact nor energy efficient.See, for example, the comparator 10 of FIG. 1, which involves the use ofmany transistor components 12, each drawing power from voltage source 14to produce an output 16. The high complexity of such analog comparatorsand their many powered components makes them unsuitable for low-cost,low power, asynchronous circuits. As such, there are no availablecompact S/A circuits for resistor-based memory which provide low-power,asynchronous operation.

SUMMARY

A system is shown that includes a memory cell having a plurality ofconsecutive memory states, each of said states corresponding to arespective output voltage, configured to receive a wordline signal andto output a voltage a sense amplifier configured to read a stored stateof the memory cell. The sense amplifier further includes a voltagedivider configured to receive the output voltage of the memory cell andto output a settled voltage and an amplifier having a voltage thresholdbetween the settled voltages associated with two of said consecutivememory states, configured to discriminate between said two consecutivememory states and to produce a logical output that reflects the storedstate.

A memory circuit is shown that includes a memory cell in one of Nconsecutive memory states, each of said states corresponding to arespective output voltage, where N is greater than or equal to three,configured to receive a wordline signal and to output a voltage and N−1sense amplifiers configured to read a stored state of the memory cell.Each sense amplifier includes a voltage divider configured to receivethe output voltage of the memory cell and to output a settled voltageand an inverter having a voltage threshold between the settled voltagesassociated with two of said consecutive memory states, configured todiscriminate between said two consecutive memory states. The outputs ofthe sense amplifiers determine which of the N memory states is stored inthe memory cell.

A memory circuit is shown that includes a memory cell having a pluralityof consecutive memory states, each of said states corresponding to arespective output voltage; a memory write macro configured to receivethe output voltage of the memory cell and further configured to changethe state of the memory cell; a sense amplifier configured to read thestate of the memory cell; and a switch configured to enable one of thememory write macro and the sense amplifier. The sense amplifier furtherincludes a voltage divider configured to receive the output voltage ofthe memory cell and to output a settled voltage and an amplifier havinga voltage threshold between the settled voltages associated with two ofsaid consecutive memory states, configured to discriminate between saidtwo consecutive memory states.

A method is shown that includes applying a wordline signal to a memorycell to generate a bitline output voltage, comparing the bitline outputvoltage to one or more voltage thresholds, and producing a logicaloutput based on the threshold comparison that reflects a state stored inthe memory cell.

These and other features and advantages will become apparent from thefollowing detailed description of illustrative embodiments thereof,which is to be read in connection with the accompanying drawings.

BRIEF DESCRIPTION OF DRAWINGS

The disclosure will provide details in the following description ofpreferred embodiments with reference to the following figures wherein:

FIG. 1 shows a schematic diagram of an analog comparator;

FIG. 2 shows a schematic diagram of a memory circuit including a senseamplifier (S/A) according to the present principles;

FIG. 3 shows a schematic diagram of a memory circuit including an S/Athat uses transistors for switching voltage division;

FIG. 4 shows a schematic diagram of a memory circuit including amulti-level memory cell and multiple S/As;

FIG. 5 shows a schematic diagram of a memory circuit including an inputterminal configured as a diode;

FIG. 6 shows a diagram of the relationship between S/A output and storedmemory cell values; and

FIG. 7 shows a timing diagram of voltage over time for memory circuitshaving different stored memory values.

FIG. 8 shows a high-level block diagram of a resistor-based memorycircuit.

FIG. 9 shows a block/flow diagram illustrating a method for reading astored memory state from a resistor-based memory cell.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

A compact, low-power, asynchronous sense amplifier (S/A) circuit can beimplemented according to the present principles. Referring now to thedrawings in which like numerals represent the same or similar elementsand initially to FIG. 2, an exemplary design of such an S/A circuit 100is shown in the context of a resistor-based memory circuit. Thisembodiment can be made very compact, as it may be based on a resistor(or a diode) and an inverter. Compared to an analog comparator (e.g.,FIG. 1), the design of FIG. 2 is much smaller and uses less power.Furthermore, because the S/A is connected to the bitlines and because noS/A enable signal or clock signal is needed, fully asynchronousoperation is possible. During a read operation, a pulse signal isapplied to the gate of the memory access device, which makes the S/Acircuit generate a pulse if the memory cell is in its low-resistancestate. There is therefore no precharge phase and, hence, no clock signalis needed. Additional S/A circuits and outputs are possible if thememory cell has more than two memory possible states.

As will be appreciated by one skilled in the art, aspects of the presentinvention may be embodied as a system or method. Accordingly, aspects ofthe present invention may take the form of an entirely hardwareembodiment or an embodiment combining software and hardware aspects thatmay all generally be referred to herein as a “circuit,” “module” or“system.”

The flowchart and block diagrams in the Figures illustrate thearchitecture, functionality, and operation of possible implementationsof systems, methods and computer program products according to variousembodiments of the present invention. In this regard, each block in theflowchart or block diagrams may represent a module, segment, or portionof code, which comprises one or more executable instructions forimplementing the specified logical function(s). It should also be notedthat, in some alternative implementations, the functions noted in theblock may occur out of the order noted in the figures. For example, twoblocks shown in succession may, in fact, be executed substantiallyconcurrently, or the blocks may sometimes be executed in the reverseorder, depending upon the functionality involved. It will also be notedthat each block of the block diagrams and/or flowchart illustration, andcombinations of blocks in the block diagrams and/or flowchartillustration, can be implemented by special purpose hardware-basedsystems that perform the specified functions or acts, or combinations ofspecial purpose hardware and computer instructions.

The circuits as described herein may be part of a design for anintegrated circuit chip. The chip design may be created in a graphicalcomputer programming language, and stored in a computer storage medium(such as a disk, tape, physical hard drive, or virtual hard drive suchas in a storage access network). If the designer does not fabricatechips or the photolithographic masks used to fabricate chips, thedesigner may transmit the resulting design by physical means (e.g., byproviding a copy of the storage medium storing the design) orelectronically (e.g., through the Internet) to such entities, directlyor indirectly. The stored design is then converted into the appropriateformat (e.g., GDSII) for the fabrication of photolithographic masks,which typically include multiple copies of the chip design in questionthat are to be formed on a wafer. The photolithographic masks areutilized to define areas of the wafer (and/or the layers thereon) to beetched or otherwise processed.

The methods as described herein may be used in the fabrication ofintegrated circuit chips. The resulting integrated circuit chips can bedistributed by the fabricator in raw wafer form (that is, as a singlewafer that has multiple unpackaged chips), as a bare die, or in apackaged form. In the latter case the chip is mounted in a single chippackage (such as a plastic carrier, with leads that are affixed to amotherboard or other higher level carrier) or in a multichip package(such as a ceramic carrier that has either or both surfaceinterconnections or buried interconnections). In any case the chip isthen integrated with other chips, discrete circuit elements, and/orother signal processing devices as part of either (a) an intermediateproduct, such as a motherboard, or (b) an end product. The end productcan be any product that includes integrated circuit chips, ranging fromtoys and other low-end applications to advanced computer products havinga display, a keyboard or other input device, and a central processor.

Referring now to FIG. 8, a high-level diagram of a resistor-based memorycircuit is shown. A wordline 802 is applied to a memory cell 804. Thememory cell 804 produces a bitline 806, where the output voltagereflects the resistance state of the memory cell 804. A switch 808determines whether this bitline is applied to a read circuit 810 or awrite circuit 812. The read circuit 810 produces a logical output thatreflects the stored state of the memory cell 804.

Referring now to FIG. 2, a resistor-based memory circuit with an S/Acircuit 100 according to the present principles is shown. A memory cell,R_(mem) 108 stores a memory state and can be modeled as a variableresistor. An exemplary type of resistor-based memory is phase-changememory (PCM), wherein a temperature change causes the resistor to changebetween a high-resistance phase and a low-resistance phase. These phasesare used to represent different logical outputs, and modernresistor-based memory cells can store multiple bits by implementingadditional memory levels of resistance.

In one exemplary embodiment, the memory cell has two states: ahigh-resistance state (R_(mem)=R_(hi)) and a low-resistance state(R_(mem)=R_(low)). An exemplary phase change involves heatingchalcogenide glass until it loses its crystallinity. The glass thencools into an amorphous state, representing its high-resistance state.The glass may be heated again, to a temperature above itscrystallization point but below its melting point. This returns theglass to its crystalline state, having a much lower resistance. AlthoughPCM is discussed herein for the purpose of illustration, any form ofresistor-based memory may be employed.

Memory access is triggered by access device M1 106 which may, forexample, be implemented as a metal-oxide-semiconductor field effecttransistor (MOSFET). When a wordline signal WL 102 arrives at M1 106,source voltage V_(DD) 104 is applied to memory cell 108. Current acrossthe memory cell 108 is applied to the S/A circuit 110. The currentacross the memory cell 108 will reflect the memory cell's resistanceand, hence, a logical state stored therein.

The S/A circuit 100 includes a resistor R_(sa) 116 which implements aresistor divider in series with R_(mem) 108 and M1 106 and goes toground. An amplifier 118 is connected in parallel with the S/A resistor116. The amplifier 118 may be implemented as an inverter comprised oftwo MOSFETs. MOSFETs are used herein for the purpose of illustration fortheir small component size, but it is contemplated that other forms ofamplifiers or inverters may be used. A p-channel MOSFET (PMOS) 120 andan n-channel MOSFET (NMOS) 122 are connected as shown to a voltagesource and to ground. When a voltage is applied to the inverter 118 thatexceeds the triggering threshold voltage of the inverter, the NMOS 122is activated and the PMOS 120 is turned off. This brings the voltage atthe output of the inverter 118 to ground, producing a logical output of0. When a voltage is applied to the inverter 118 that is below theinverter's threshold, the PMOS 120 is activated and the NMOS 122 isdeactivated, producing a logical output of 1. In this fashion, theinverter 118 reverses logical value of the voltage applied to it.

In idle operation mode, access device M1 106 is off, so the voltageinside the S/A circuit is pulled to ground by R_(sa) 116. As a low inputis applied to the inverter 118, the inverter therefore produces a highoutput. During a read operation, a pulse is sent to access device M1106. The voltage divider then generates a settled voltage:

${V_{sa} = \frac{V_{DD}R_{sa}}{R_{sa} + R_{mem} + R_{{M\; 1}\;}}},$where R_(M1) represents the resistances of access device M1 106, R_(sa)represents the resistance in the voltage divider 116, and R_(mem)represents the resistance of the memory cell 108. The inverter thresholdvoltage V_(TH) is set such that

${\frac{V_{DD}R_{sa}}{R_{sa} + R_{hi} + R_{M\; 1}} < V_{TH} < \frac{V_{DD}R_{sa}}{R_{sa} + R_{low} + R_{M\; 1}}},$where R_(low), represents the resistance of the memory cell 108 in itslow state and R_(hi) represents the resistance of the memory cell 108 inits high state. When R_(mem)=R_(hi), V_(sa) is smaller than V_(TH) andthe inverter output stays high as a result. When R_(mem)=R_(low), V_(sa)is larger than V_(TH) and the inverter output changes from high to low,producing a logical 0. Once WL 102 becomes low, access device M1 106turns off and the settled voltage V_(sa) drops back to ground.Therefore, the inverter output changes back to high, producing a logical1.

Referring now to FIG. 3, another embodiment is shown in accordance withthe present principles. A memory cell circuit 200 provides the abilityto change the state of the memory cell. The operation of the memory cellcircuit 200 is controlled by switches S1 110 and S2 112. As shown forswitch S2 112, it is contemplated that the switches may be implementedas MOSFETs, in particular an NMOS, to further reduce circuit area. WhenS1 110 is closed, memory write macro 114 is engaged and the state of thememory cell 108 is changed accordingly. When switch S2 112 is closed,the S/A circuit 100 is engaged and the state of the memory cell 108 isread out. The switches 110 and 112 are controlled by write signals.During write operation, switch S2 112 is open, whereas during read andidle operations, switch S1 110 is open. A bitline output from memorycell 108 is always connected to the S/A circuit 100 in non-writeconditions, such that in read operation, no S/A enable signal or clocksignal is needed. This allows the S/A circuit to be operatedasynchronously when used in the same circuit as a write macro.

The resistor R_(sa) from FIG. 2 is replaced by an NMOS transistor wiredas a diode M2 202 to further save area. To emphasize the potentiallyvery small area consumed by a circuit of the present embodiment, theread circuit shown as the S/A circuit of FIG. 3 can be implemented in anarea as small as, e.g., about 3.8 μm by 4.4 μm using a 0.90 nm process.Using a more precise process will permit even smaller circuit features.

Referring now to FIG. 4, an embodiment of the present principles isshown that includes a multi-level resistor-based memory cell 108. Inthis embodiment the memory cell 108 has the ability to produce multiple(more than two) levels of resistance, allowing for the storage ofadditional bits of information. This is an advantage of resistor-basedmemory over conventional memories, such as SRAM, DRAM, and flash memory.Conventional memories have only two levels: 0 and 1. In resistor-basedmemories, the resistance of the memory cells can be programmed to be atdifferent values, which means that multi-level memory is achievable withan appropriate read circuit, allowing more information to be stored inthe same area.

To measure N memory cell levels, N−1 S/A circuits 301 are connected inparallel to the output of the memory cell 108. One exemplary way todetect N memory cell resistance values is to vary the N−1 inverterthreshold voltages. In the N−1 S/A circuits 302, the diode transistorsused in each are similar, but the S/A circuits have a different inverterthreshold voltage. For example, V_(TH,1)>V_(TH,2)> . . . >V_(TH,N-1). Ifthe maximum and minimum resistances are R_(max) and R_(min)respectively, then the voltage divider generates a settled voltage

$V_{sa} = \frac{V_{DD}R_{sa}}{R_{sa} + R_{S\; 2} + R_{mem} + R_{M\; 1}}$at each S/A's input. The i^(th) inverter's threshold voltage V_(TH,1)should be set between

$\frac{R_{sa}}{R_{sa} + R_{S\; 2} + R_{M\; 1} + R_{m\; i\; n} + {\left( {i - 1} \right){\left( {R_{{ma}\; x} - R_{m\; i\; n}} \right)/\left( {N - 1} \right)}}}$and$\frac{R_{sa}}{R_{sa} + R_{\;{S2}} + R_{M\; 1} + R_{m\; i\; n} + {{i\left( {R_{m\;{ax}} - R_{m\; i\; n}} \right)}/\left( {N - 1} \right)}}.$

The i^(th) inverter differentiates the memory resistance value smallerthan R_(min)+(i−1)(R_(max)−R_(min))/(N−1) and larger thanR_(min)+i(R_(max)−R_(min))/(N−1). The N−1 S/A output signals have athermometer coding, representing the digitized memory resistance values.Thermometer coding represents an output value as a number of activatedoutputs. So, for example, having the first 5 S/A circuits output at 1would represent a stored value of 5. Various inverter threshold voltagescan be achieved by varying the width-to-length ratio of the PMOS andNMOS transistors in the S/A circuits 301.

In a circuit such as that shown in FIG. 4, where the memory cell 108 canbe in one of eight different memory states, the cell 108 can effectivelystore three binary bits of information (in other words, the statesrepresent 000, 001, 010, 011, 100, 101, 110, and 111). It should benoted that the number of S/A circuits needed to service a memory cellwill be the 2^(n), where n is the number of bits. As such, it is notpractical to increase the number of levels of the memory cell 108indefinitely—at some point the space saved by the use of only a singlememory cell will be outweighed by the cost of having additional readcircuits. For example, one memory cell that stores four bits will usesixteen (2⁴) S/A circuits, whereas two memory cells that store two bitseach will use a total of eight (2²+2²) S/A circuits. As such, a memorycell having an appropriate number of elements should be selected tooptimize power and space savings.

Referring now to FIG. 5, a further embodiment is shown where an inputterminal M1 106 is configured as a diode. Signals coming from WL 102pass through the diode 106. Implementing the input terminal as a diodefurther simplifies the circuit and provides additional space and powersavings.

Referring now to FIG. 6, a table showing the output of a read circuithaving an eight-level memory cell is shown. In this case, the memorycell is in the state i=4. This produces a voltage V_(sa) that is betweenthe threshold voltages of S/A3 and S/A4. As such, read circuits S/A1,S/A2, and S/A3 will be activated, producing a 0 output. The other fourread circuits have a threshold voltage higher than V_(sa), and theytherefore continue to output 1.

Referring now to FIG. 7, a timing diagram showing a simulation ofmultiple resistor-based memory read operations is illustrativelydepicted. There are four memory cells, shown as graphs SA_OUT1_BARthrough SA_OUT4_BAR (the _BAR suffix denotes that the displayed graphsare the opposite of the actual outputs of the respective S/A circuits).The graphs show voltage level on the vertical axis and time on thehorizontal axis. Cells 1 and 3 are set to a high-resistance state:R_(mem)=R_(hi), e.g., 2MΩ. Memories 2 and 4 are set to a low-resistancestate: R_(mem)=R_(low), e.g., 200KΩ. At 2.5 μs there is a pulse on inputWL. This generates pulses in the S/A outputs of cells 2 and 4, sincethey are set to the low-resistance state. The S/A outputs of cells 1 and3 remain low, since cells 1 and 3 are in the high-resistance state. Inthis simulation, the read energy is 0.13pJ/read. As can be seen fromFIG. 7, neither the input nor the outputs require a clock signal,allowing for fully asynchronous operation. Inputs are processed as theyarrive and outputs are provided without delay.

Referring now to FIG. 8, a block/flow diagram describing the operationof a resistor-based memory circuit according to the present principlesis shown. At block 902, a wordline signal is applied to a memory cell togenerate a bitline output voltage. As described above, anyresistor-based memory cell may be used. The memory cell produces abitline output, which is compared at block 904 to one or morethresholds. This comparison is then used in block 906 to produce a readoutput that reflects the state of the memory cell. The state of the cellis then determined at block 908 by counting how many of the thresholdswere exceeded by the output voltage in the comparison.

Having described preferred embodiments of a system for low-powerasynchronous resistor-based read operations (which are intended to beillustrative and not limiting), it is noted that modifications andvariations can be made by persons skilled in the art in light of theabove teachings. It is therefore to be understood that changes may bemade in the particular embodiments disclosed which are within the scopeof the invention as outlined by the appended claims. Having thusdescribed aspects of the invention, with the details and particularityrequired by the patent laws, what is claimed and desired protected byLetters Patent is set forth in the appended claims.

1. A system comprising: a phase-change memory cell including a resistorwith a plurality of resistance states associated with a plurality ofconsecutive memory states, each of said states corresponding to arespective output voltage, configured to receive a wordline signal andto output a voltage; and a sense amplifier configured to read a storedstate of the memory cell, comprising: a voltage divider configured toreceive the output voltage of the memory cell and to output a settledvoltage; and an amplifier having a voltage threshold between the settledvoltages associated with two of said consecutive memory states,configured to discriminate between said two consecutive memory statesand to produce a logical output that reflects the stored state.
 2. Thesystem of claim 1, wherein the amplifier is an inverter.
 3. The systemof claim 1, wherein the voltage divider comprises a transistor havingits source and gate terminals connected to the output voltage of thememory cell.
 4. The system of claim 1, wherein the sense amplifier isconfigured to operate asynchronously, without a clock signal.
 5. Amemory circuit comprising: a memory cell in one of N consecutive memorystates, each of said states corresponding to a respective outputvoltage, where N is greater than or equal to three, configured toreceive a wordline signal and to output a voltage; and N−1 senseamplifiers configured to read a stored state of the memory cell, eachcomprising: a voltage divider configured to receive the output voltageof the memory cell and to output a settled voltage; and an inverterhaving a voltage threshold between the settled voltages associated withtwo of said consecutive memory states, configured to discriminatebetween said two consecutive memory states, wherein the outputs of thesense amplifiers determine which of the N memory states is stored in thememory cell.
 6. The memory circuit of claim 5, wherein the amplifier isan inverter.
 7. The memory circuit of claim 5, wherein the memory cellis a phase-change memory cell including a resistor with N resistancestates.
 8. The memory circuit of claim 5, wherein the voltage dividercomprises a transistor having its source and gate terminals connected tothe output voltage of the memory cell.
 9. The memory circuit of claim 5,wherein the sense amplifier is configured to operate asynchronously,without a clock signal.
 10. The memory circuit of claim 5, wherein thesense amplifiers are connected to the memory cell in parallel.
 11. Amemory circuit comprising: a memory cell having a plurality ofconsecutive memory states, each of said states corresponding to arespective output voltage; a memory write macro configured to receivethe output voltage of the memory cell and further configured to changethe state of the memory cell; a sense amplifier configured to read thestate of the memory cell, comprising: a voltage divider configured toreceive the output voltage of the memory cell and to output a settledvoltage; and an amplifier having a voltage threshold between the settledvoltages associated with two of said consecutive memory states,configured to discriminate between said two consecutive memory states;and a switch configured to enable one of the memory write macro and thesense amplifier.
 12. The memory circuit of claim 11, wherein theamplifier is an inverter.
 13. The memory circuit of claim 11, whereinthe memory cell is a phase-change memory cell including a resistor witha plurality of resistance states.
 14. The memory circuit of claim 11,wherein the memory cell has a number of consecutive memory states N >2.15. The memory circuit of claim 14, further comprising N−1 senseamplifiers connected in parallel to the memory cell, wherein the outputsof the sense amplifiers determine which of the N memory states is storedin the memory cell according to a thermometer coding of said outputs.16. The system of claim 11, further comprising a plurality of senseamplifiers connected to a common bitline.
 17. The system of claim 16,wherein the bitline receives the output of the memory cell and providesit to the sense amplifiers.
 18. The system of claim 16, wherein thesense amplifiers are connected to the bitline in parallel.
 19. Thesystem of claim 16, wherein the memory write macro is connected to thebitline and the switch enables the memory write macro and the senseamplifiers by connecting one or the other to the bitline.
 20. A method,comprising: applying a wordline signal to a phase-change memory cellincluding a resistor with a plurality of resistance states to generate abitline output voltage; comparing the bitline output voltage to one ormore voltage thresholds associated with respective resistance states;and producing a logical output based on the threshold comparison thatreflects a state stored in the memory cell.
 21. The method of claim 20,wherein comparing includes comparing the bitline output voltage to aplurality of voltage thresholds.
 22. The method of claim 21, furthercomprising the step of determining the state stored in the memory cellbased on a number of thresholds exceeded in the comparison.
 23. Themethod of claim 20, wherein said applying, comparing, and producing areperformed asynchronously, without a clock signal.